| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits electric field concentration around ends of a groove.SOLUTION: A semiconductor device SD comprises a semiconductor layer SL, a source region SR, a drain region DR, a source off-set region SOS, a drain off-set region DOS, a groove GT, a gate insulation film GI, a gate electrode GE and a buried region BR. The groove GT is provided in the semiconductor layer SL and at least between the source off-set region SOS and the drain off-set region DOS in planar view, and in a direction running from the source off-set region SOS to the drain off-set region DOS in planar view. The gate insulation film GI covers lateral faces and a bottom face of the groove GT. The gate electrode GE is provided only in the groove GT in planar view and contacts the gate insulation film GI. |
