| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces connection resistance between two via distribution lines which are vertically connected.SOLUTION: A semiconductor device includes a first insulation layer in which a first via hole is formed. The semiconductor device includes a first barrier metal film deposited on an inner surface of the first via hole. The semiconductor device includes a first via distribution line embedded in the first via hole through the first barrier metal film. The semiconductor device includes a second insulation layer provided on the first insulation layer and where a second via hole is formed so as to contact with the first via hole. The semiconductor device includes a second barrier metal film deposited on an inner surface of the second via hole. The semiconductor device includes a second via distribution line embedded in the second via hole through the second barrier metal film and having a lower part contacting with an upper part of the first via distribution line through the second barrier metal film. |
