发明名称 METHOD AND APPARATUS FOR READ ASSIST TO COMPENSATE FOR WEAK BIT
摘要 A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.
申请公布号 US2013258747(A1) 申请公布日期 2013.10.03
申请号 US201213437081 申请日期 2012.04.02
申请人 CHANG JONATHAN TSUNG-YUNG;LEE CHENG HUNG;CHOU CHUNG-CHENG;LIAO HUNG-JEN;LO BIN-HAU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHANG JONATHAN TSUNG-YUNG;LEE CHENG HUNG;CHOU CHUNG-CHENG;LIAO HUNG-JEN;LO BIN-HAU
分类号 G11C17/00;G11C7/06;G11C11/00 主分类号 G11C17/00
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