发明名称 |
Gate Overvoltage Protection for Compound Semiconductor Transistors |
摘要 |
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material. |
申请公布号 |
US2013256699(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213435447 |
申请日期 |
2012.03.30 |
申请人 |
VIELEMEYER MARTIN;HUTZLER MICHAEL;CURATOLA GILBERTO;POZZOVIVO GIANMAURO;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
VIELEMEYER MARTIN;HUTZLER MICHAEL;CURATOLA GILBERTO;POZZOVIVO GIANMAURO |
分类号 |
H01L29/778;H01L29/16;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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