摘要 |
<p>Disclosed are a chemical vapour deposition method for an organic metal compound and an apparatus therefor. The method comprises: providing a base and at least one substrate; providing a first gas inlet device and a second gas inlet device, the spraying direction of a first gas along a first gas outlet forming an included angle with the spraying direction of a second gas along a second gas outlet; depositing the first gas and the second gas on the surface of the substrate to obtain a layer of organic metal compound; the first gas being distributed in the reaction region in a concentration gradient, comprising an A region and a B region, with the average gas concentration in the A region being higher than that in the B region; the second gas being distributed in the reaction region in a concentration gradient, comprising a C region and a D region, with the average gas concentration in the C region being higher than that in the D region; the A regions and the C regions being arranged alternately; and the substrate passing through the A region and the C region in sequence. The present invention can not only avoid the premature reaction of the reactive gases, but also improve the reaction rate and reduce production costs.</p> |
申请人 |
IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD.;MA, YUE;HUANG, ZHANCHAO;HE, CHUAN;WANG, JUN;SONG, TAO;LIN, FANG;REN, AILING;CHEONG, HUNGSEOB;UMOTOY, SAL;XI, MING |
发明人 |
MA, YUE;HUANG, ZHANCHAO;HE, CHUAN;WANG, JUN;SONG, TAO;LIN, FANG;REN, AILING;CHEONG, HUNGSEOB;UMOTOY, SAL;XI, MING |