发明名称 CHEMICAL VAPOUR DEPOSITION METHOD FOR ORGANIC METAL COMPOUND AND APPARATUS THEREFOR
摘要 <p>Disclosed are a chemical vapour deposition method for an organic metal compound and an apparatus therefor. The method comprises: providing a base and at least one substrate; providing a first gas inlet device and a second gas inlet device, the spraying direction of a first gas along a first gas outlet forming an included angle with the spraying direction of a second gas along a second gas outlet; depositing the first gas and the second gas on the surface of the substrate to obtain a layer of organic metal compound; the first gas being distributed in the reaction region in a concentration gradient, comprising an A region and a B region, with the average gas concentration in the A region being higher than that in the B region; the second gas being distributed in the reaction region in a concentration gradient, comprising a C region and a D region, with the average gas concentration in the C region being higher than that in the D region; the A regions and the C regions being arranged alternately; and the substrate passing through the A region and the C region in sequence. The present invention can not only avoid the premature reaction of the reactive gases, but also improve the reaction rate and reduce production costs.</p>
申请公布号 WO2013143241(A1) 申请公布日期 2013.10.03
申请号 WO2012CN78581 申请日期 2012.07.12
申请人 IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD.;MA, YUE;HUANG, ZHANCHAO;HE, CHUAN;WANG, JUN;SONG, TAO;LIN, FANG;REN, AILING;CHEONG, HUNGSEOB;UMOTOY, SAL;XI, MING 发明人 MA, YUE;HUANG, ZHANCHAO;HE, CHUAN;WANG, JUN;SONG, TAO;LIN, FANG;REN, AILING;CHEONG, HUNGSEOB;UMOTOY, SAL;XI, MING
分类号 C23C16/18;C23C16/44;C23C16/455;C23C16/458 主分类号 C23C16/18
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