摘要 |
A method of measuring, recording, and calculating high speed differential voltage measurements across a device-under-test during electrostatic discharge testing of for discrete devices and silicon wafer probing uses high frequency components and a combination of high impedance resistors and attenuators to allow differential voltage measurements of stress signals including IED 61000-4-2, HMM, HBM, and MM with voltages in excess of +/-12000V.
|