| 摘要 |
A thin film transistor is disclosed. The drain and source electrode layer of the thin film transistor is disposed on the substrate, in which the drain and source electrode layer is divided into a drain region and a source region. The semiconductor layer and the first insulating layer are disposed on the drain and source electrode layer, in which the first insulating layer has an upper limit of thickness. The second insulating layer is disposed on the semiconductor layer and the first insulating layer, in which the second insulating layer has a lower limit of thickness. The gate electrode layer is disposed on the second insulating layer. The passivation layer is disposed on the gate electrode layer, and the pixel electrode layer is disposed on the passivation layer.
|
