WAFER SAWING METHOD AND WAFER STRUCTURE BENEFICIAL FOR PERFORMING THE SAME

摘要

A wafer sawing method comprises steps as follows: A wafer having a first surface and a second surface is firstly provided. An integrated circuit fabricating process is performed on the first surface of the wafer to define a first integrated circuit region and a periphery region surrounding around the first integrated circuit region, wherein the integrated circuit fabricating process includes an etching process used to form a first deep trench having an aspect ratio larger than 10 as well as a depth substantially ranging from one-third to two-third thickness of the wafer on the periphery region. Subsequently, an adhesive tape is disposed on the first surface at least covering the first integrated circuit region and the periphery region. A tensile stress is then imposed on the adhesive tape in order to make the wafer broken off along the first deep trench.