发明名称 |
MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL |
摘要 |
A manufacturing method for a thin film transistor array panel includes: providing a gate line including a gate electrode, on a substrate; providing a gate insulating layer covering the gate line; providing a semiconductor material layer on the gate insulating layer; providing a data wire material layer on the semiconductor material layer; providing a first photosensitive film pattern on the data wire material layer; etching the data wire material layer by using the first photosensitive film pattern as a mask; providing a second photosensitive film pattern by etching back the first photosensitive film pattern; etching the semiconductor material layer by using the second photosensitive film pattern as a mask; and etching the data wire material layer by using the second photosensitive film pattern as a mask to form a source electrode and a drain electrode. The etching the semiconductor material layer uses a first non-sulfur fluorinated gas.
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申请公布号 |
US2013260568(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213569586 |
申请日期 |
2012.08.08 |
申请人 |
HWANG JAE SEUNG;LEE JAE-WON;SEO JUN;SAMSUNG DISPLAY CO., LTD. |
发明人 |
HWANG JAE SEUNG;LEE JAE-WON;SEO JUN |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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