发明名称 |
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS |
摘要 |
An embodiment of a semiconductor memory device including a multi-layer charge storing layer and methods of forming the same are described. Generally, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide layer overlying the channel; and a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the second oxynitride layer results in it being trap dense. In one embodiment, the device comprises a non-planar transistor including a gate having multiple surfaces abutting the channel, and the gate comprises the tunnel oxide layer and the multi-layer charge storing layer. |
申请公布号 |
WO2013148343(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
WO2013US32339 |
申请日期 |
2013.03.15 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION;LEVY, SAGY;RAMKUMAR, KRISHNASWAMY;JENNE, FREDRICK;GEHA, SAM |
发明人 |
LEVY, SAGY;RAMKUMAR, KRISHNASWAMY;JENNE, FREDRICK;GEHA, SAM |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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