<p>Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.</p>
申请公布号
WO2013147552(A1)
申请公布日期
2013.10.03
申请号
WO2013KR02647
申请日期
2013.03.29
申请人
SEOUL OPTO DEVICE CO., LTD.
发明人
HAN, CHANG SUK;KIM, HWA MOK;CHOI, HYO SHIK;KO, MI SO;LEE, A RAM CHA