发明名称 |
TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MODULE INCLUDING THE SAME |
摘要 |
A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.
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申请公布号 |
US2013256770(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201313779179 |
申请日期 |
2013.02.27 |
申请人 |
HUH KI-JAE;YAMADA SATORU;LIM JUN-HEE;JANG SUNG-HO |
发明人 |
HUH KI-JAE;YAMADA SATORU;LIM JUN-HEE;JANG SUNG-HO |
分类号 |
H01L29/78;H01L27/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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