SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR CRYSTAL, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND NITRIDE SEMICONDUCTOR CRYSTAL MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having low on-resistance.SOLUTION: A semiconductor device comprises: a nucleation layer formed on a substrate; a buffer layer formed on the nucleation layer; a first nitride semiconductor layer formed on the buffer layer; and a second nitride semiconductor layer formed on the first semiconductor layer. A ratio of yellow luminescence emission to band end emission in photoluminescence is 400% or less, and a twist value in an X-ray rocking curve is 1000 arcsecond or less.