| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of different kinds of elements together, which are formed on the same substrate.SOLUTION: A semiconductor device according to an embodiment comprises: a first semiconductor layer of a first conductivity type which has first and second surfaces; and a second semiconductor layer of a second conductivity type and a third semiconductor layer of the first conductivity type, which are formed on the second surface side of the first semiconductor layer to be adjacent to each other; a fourth semiconductor layer of the second conductivity type which is formed on the first surface side so as to be opposite to the second semiconductor layer; a fifth semiconductor layer of the first conductivity type which is formed on a surface of the fourth semiconductor layer; a sixth semiconductor layer of the second conductivity type which is formed on the first surface side so as to be opposite to the third semiconductor layer; and a gate electrode formed in a first trench which pierces the fourth semiconductor layer. A depth of a bottom face of the sixth semiconductor layer is deeper than a depth of a bottom face of the fourth semiconductor layer. A distance between the bottom face of the sixth semiconductor layer and the second surface of the first semiconductor layer is shorter than a distance between a bottom face of the fourth semiconductor layer and the second surface of the first semiconductor layer. |
