发明名称 |
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER |
摘要 |
Embodiments of a non-planar memory device including a split charge-trapping region and methods of forming the same are described. Generally, the device comprises: a channel formed from a thin film of semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide overlying the channel; a split charge-trapping region overlying the tunnel oxide, the split charge-trapping region including a bottom charge-trapping layer comprising a nitride closer to the tunnel oxide, and a top charge-trapping layer, wherein the bottom charge-trapping layer is separated from the top charge-trapping layer by a thin anti-tunneling layer comprising an oxide. Other embodiments are also disclosed. |
申请公布号 |
WO2013148112(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
WO2013US29784 |
申请日期 |
2013.03.08 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION;JENNE, FREDRICK;RAMKUMAR, KRISHNASWAMY |
发明人 |
JENNE, FREDRICK;RAMKUMAR, KRISHNASWAMY |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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