发明名称 |
ENHANCED EUV LITHOGRAPHY SYSTEM |
摘要 |
The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.
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申请公布号 |
US2013258304(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213437145 |
申请日期 |
2012.04.02 |
申请人 |
CHANG CHING-HSU;CHENG NIAN-FUH;CHOU CHIH-SHIANG;HUANG WEN-CHUN;LIU RU-GUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHANG CHING-HSU;CHENG NIAN-FUH;CHOU CHIH-SHIANG;HUANG WEN-CHUN;LIU RU-GUN |
分类号 |
G03F1/22;G03B27/72;G06F17/50 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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