发明名称 Current detection circuit for a power semiconductor device
摘要 <p>An object of the present invention is to provide a current detection circuit for a power semiconductor device, the current detection circuit having a small circuit scale and a small number of parts, and generating a small amount of losses. The current detection circuit executes current detection utilizing a sense function of the power semiconductor device. An unknown magnitude of current flowing in power semiconductor devices 1, 11 is detected by a current-voltage conversion circuit 24 connecting to sense terminals S, S of the power semiconductor devices. The detected signal is delivered to a current direction detection circuit 27, which detects the direction of the current and delivers the detected current direction signal to an external CPU 3, which in turn gives gain-setting and offset-setting signals corresponding to the current direction signal. An output gain adjuster 221 adjusts a magnitude of gain and an output offset adjuster 231 adjusts a magnitude of offset to execute correction for difference between the characteristics of the sense region and the main region.</p>
申请公布号 EP2444817(B1) 申请公布日期 2013.10.02
申请号 EP20110186084 申请日期 2011.10.21
申请人 FUJI ELECTRIC CO., LTD. 发明人 SASAKI, MASAHIRO
分类号 G01R19/00 主分类号 G01R19/00
代理机构 代理人
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