Semiconductor device

摘要

There is provided a semiconductor device formed of a highly integrated high-speed CMOS inverter coupling circuit using SGTs provided on at least two stages. A semiconductor device according to the present invention is formed of a CMOS inverter coupling circuit in which n (n is two or above) CMOS inverters are coupled with each other, each of the n inverters has: a pMOS SGT; an nMOS SGT, an input terminal arranged so as to connect a gate of the pMOS SGT with a gate of the nMOS SGT; an output terminal arranged to connect a drain diffusion layer of the pMOS SGT with a drain diffusion layer of the nMOS SGT in an island-shaped semiconductor lower layer; a pMOS SGT power supply wiring line (21, 33) arranged on a source diffusion layer of the pMOS SGT; and an nMOS SGT (20) power supply wiring line arranged on a source diffusion layer of the nMOS SGT, and an (n-1)th output terminal is connected with an nth input terminal.