发明名称 |
USING LOW PRESSURE EPI TO ENABLE LOW RDSON FET |
摘要 |
<p>A method for forming an epitaxial layer on a substrate may have the steps of: forming a heavily doped silicon substrate; depositing an epitaxial layer at sub atmospheric pressure on the heavily doped silicon substrate; and implanting dopant into the epitaxial layer by ion implantation to form a lightly doped epitaxial layer.</p> |
申请公布号 |
EP2643849(A1) |
申请公布日期 |
2013.10.02 |
申请号 |
EP20110793920 |
申请日期 |
2011.11.21 |
申请人 |
MICROCHIP TECHNOLOGY INCORPORATED |
发明人 |
DIX, GREGORY;LEATHERWOOD, PAM |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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