发明名称 |
Nitride semiconductor crystal and its production method |
摘要 |
A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
|
申请公布号 |
US8545626(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20090920976 |
申请日期 |
2009.03.02 |
申请人 |
FUJITO KENJI;KUBO SHUICHI;MASHIGE YOKO;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
FUJITO KENJI;KUBO SHUICHI;MASHIGE YOKO |
分类号 |
C30B25/02;C01B21/06;C30B23/00;C30B25/00 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|