发明名称 Linearizing field effect transistors in the OHMIC region
摘要 Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus can include a field effect transistor (FET), averaging resistors and a bidirectional current source. The averaging resistors can apply an average of a voltage at the source of the FET and a voltage at the drain of the FET to the gate of the field effect transistor. The bidirectional current source can turn the FET on and off. The FET can operate in the ohmic region when on. Such an apparatus can improve the linearity of the FET as a resistor, for example, at lower frequencies near or at direct current (DC). In some implementations, the apparatus can include one or more current sources to remove an offset introduced by the bidirectional current source at the source and/or the drain of the FET.
申请公布号 US8547156(B2) 申请公布日期 2013.10.01
申请号 US201213358206 申请日期 2012.01.25
申请人 FOROUDI OMID;ANALOG DEVICES, INC. 发明人 FOROUDI OMID
分类号 H03L5/00 主分类号 H03L5/00
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