发明名称 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
摘要 A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
申请公布号 US8547742(B2) 申请公布日期 2013.10.01
申请号 US201213449326 申请日期 2012.04.18
申请人 SHALVI OFIR;SOMMER NAFTALI;PERLMUTTER URI;SOKOLOV DOTAN;APPLE INC. 发明人 SHALVI OFIR;SOMMER NAFTALI;PERLMUTTER URI;SOKOLOV DOTAN
分类号 G11C16/04 主分类号 G11C16/04
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