METALLIC CONTAMINATION DETECTION METHOD AND SILICON EPITAXIAL WAFER MANUFACTURING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a metallic contamination detection method which can detect metallic contamination with high sensitivity of a heat treat furnace used in a silicon substrate manufacturing process or in a device manufacturing process.SOLUTION: A metallic contamination detection method comprises: a process of measuring by a microwave photoconductive technique, a recombination lifetime distribution in a plane of a silicon substrate which is heat treated by a heat treat furnace; a process of dividing a plane of the silicon substrate into a plurality of regions and calculating an average value of recombination lifetimes in each region; and a process of detecting metallic contamination of the heat treat furnace by comparing the average values of the recombination lifetime measured values in the regions with each other.