SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To make in-plane film thickness of a semiconductor substrate uniform.SOLUTION: An embodiment comprises nine nozzles in total including four first gas supply nozzles 60, each having a first gas supply port 68 to supply at least a silicon (Si)-containing gas, and five second gas supply nozzles 70, each having a second gas supply port 72 to supply at least a carbon (C)-containing gas. The nozzles are alternately arranged in the circumferential direction of a wafer 14.