| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing group III nitride semiconductor single crystal, which can produce the group III nitride single crystal having few dislocations and being excellent in crystallinity throughout the entire wafer.SOLUTION: A mask layer 140 is formed on a GaN substrate G10 as a growth substrate. Next, a plurality of recesses X11 extending from the mask layer 140 to the GaN substrate G10 are formed by photolithography to form a seed crystal T10. The seed crystal T10 together with a raw material of a single crystal is placed in a crucible, and the pressure and the temperature are elevated The GaN substrate G10 exposed through the recesses X11 undergoes melt back with a flux. By the melting of the GaN substrate G10, the recesses X11 broaden to form recesses X12. A GaN layer 150 grows from the surface 144 of the mask layer 140 as the starting point. Dislocations extend from the slanted surfaces of the recesses X12 to unite with each other. |
