CURRENT INSULATED BEARING COMPONENTS AND BEARINGS

摘要

The present invention relates to current insulated bearing components d bearings. prising a bearing race, a rolling element such as a tap ed roller, a barrel 10 roller, a needle roller, a bearing ball and a rolling el ent cage, the bear ing component having at least one layer having a igh hardness and a tion) process, by a CVD (chemical vapor dep sition) process, or by. a PECVD (plasma enhanced chemical vapor s eposition) process at at least15 one surface region of said article, said least one layer comprising a non conductive oxide layer selected from e group comprising an Al203 layer, aTa0 layer, an Si02 layer, a mixed yer comprising two or more of the foregoing oxides, a multilayer s cture comprising alternating layers of two or more of the foregoing des and a DLC layer such as a ta-C layer,20 there being at least one•layer comprising at least one layer of a mate rial deposited by an ALP (atomic layer deposition) process on said at least one layer having a hi hardness and a high current insulation property, the ALL) layer itse aving a high current insulation property and com Figure A to 4E or layer structure selected from the said group of mate 47AbstractCURRENT INSULATED BEARING COMPONENTS AND BEARINGS5A bearing component of a linear bearing of a rolling element bearing and a sliding bearing, for example a component selected from the group com prising a bearing race, a rolling element such as a tapered roller, a barrel10 roller, a needle roller, a bearing ball and a rolling element cage, the bear ing component having at least one layer having a high hardness and a high current insulation property applied by a PVD (physical vapor deposi tion) process, by a CVD (chemical vapor deposition) process, or by. a PECVD (plasma enhanced chemical vapor deposition) process at at least15 one surface region of said article, said at least one layer comprising a non conductive oxide layer selected from the group comprising an Al203 layer, aTa0 layer, an Si02 layer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer,20 there being at least one ALD layer comprising at least one layer of a mate rial deposited by an ALD (atomic layer deposition) process on said at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and com prising a material or layer structure selected from the said group of mate 25 dais.Figures 4A to 4E