| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory that has a magnetic layer, which exists while extending in a direction in which a pinning site of a magnetic domain wall is introduced, and is capable of suppressing an increase of current at the time of a shift operation.SOLUTION: A magnetic memory according to an embodiment includes: a magnetic layer that is provided to exist while extending in a direction and includes a plurality of magnetic domains and a plurality of magnetic domain walls for partitioning the plurality of magnetic domains; a pinning layer that is provided adjacent to the magnetic layer along the direction, in which the magnetic layer exists while extending, and is composed of a non-magnetic phase and a magnetic phase; an electrode layer that is provided on a side of the pinning layer opposite to the magnetic layer; an isolation layer that is provided between the pinning layer and the electrode layer; a current introduction part for causing shift current for shifting the magnetic domain walls to flow to the magnetic layer; a writing part for writing information into the magnetic layer; a reading part for reading the information from the magnetic layer; and a voltage generation part for generating voltage applied between the pinning layer and the electrode layer. |
