SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method, a semiconductor device manufacturing method, and a substrate processing apparatus which can uniformly deposit a plurality of substrates and reliably remove by-products in an exhaust pipe when performing SiC epitaxial film growth under a high temperature condition thereby to improve productivity and safety.SOLUTION: A substrate processing method comprises: a boat loading process of carrying in a plurality of substrates while being held by a boat into a reaction chamber; a gas supply process of supplying a gas to the substrates; an exhaust process of exhausting the gas supplied in the gas supply process from an exhaust pipe; and a cleaning gas supply process of supplying a cleaning gas for cleaning inside the exhaust pipe to a cleaning gas flow path in the exhaust pipe.