| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an N channel transistor and a P channel transistor are driven to conduct selectively, and highly efficient heat dissipation action can be obtained.SOLUTION: A semiconductor device (100) includes a semiconductor substrate on which an N channel transistor and a P channel transistor are formed in push-pull connection. The N channel transistor includes one or more first regions (100n), i.e., a region forming a transistor structure, and the P channel transistor includes one or more second regions (100p), i.e., a region forming a transistor structure. The first region (100n) and the second region (100p) are arranged in stripe by adjoining alternately. |
