| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving both improvement of recovery characteristics and maintenance of ohmic contact properties, of a diode in an RC-IGBT.SOLUTION: A semiconductor device comprises: a substrate consisting of a first conductivity type semiconductor; a base layer provided on one side surface of the substrate and consisting of a second conductivity type semiconductor; an anode layer formed by increasing a total impurity amount in a region of a part of the base layer; an IGBT region formed in the base layer; a diode region formed in the anode layer; a trench reaching from surface sides of the IGBT region and the diode region to the substrate, and in which an occupied area of the trench in the diode region is different from that in the IGBT region; a drain layer consisting of the second conductivity type semiconductor facing to the IGBT region and provided on the other side surface of the substrate; and a cathode layer consisting of the first conductivity type semiconductor facing to the diode region and adjacent to the drain layer. |
