发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
摘要 PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a first magnetic film 10 having a variable direction of magnetization; a second magnetic film 11 having an invariable direction of magnetization; and a nonmagnetic film 12 provided between the first and second magnetic films in contact with at least one of them, and containing a magnesium oxide film to which at least one element, selected from a first group including copper, silver and gold, is added.
申请公布号 JP2013197345(A) 申请公布日期 2013.09.30
申请号 JP20120063485 申请日期 2012.03.21
申请人 TOSHIBA CORP 发明人 KITAGAWA EIJI;DAIBO TATATOMI;KATO YUSHI
分类号 H01L21/8246;H01L27/105;H01L29/82;H01L43/08;H01L43/10 主分类号 H01L21/8246
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