发明名称 SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, AND PROBE
摘要 PROBLEM TO BE SOLVED: To stabilize the electric conduction between a probe and an electrode.SOLUTION: A semiconductor memory device includes: a lower electrode 102 formed on an insulating film; a memory element layer 103 formed on the lower electrode 102; a plurality of upper electrodes 104 provided in a matrix shape on the memory element layer 103; and a probe 14 performing read and write of data for the memory element layer 103 by being in contact with the upper electrodes 104. Each of the upper electrodes 104 has a metal film 104a formed on the memory element layer 103 and a conductive nano-material layer 104b formed on the metal film 104a.
申请公布号 JP2013197381(A) 申请公布日期 2013.09.30
申请号 JP20120063922 申请日期 2012.03.21
申请人 TOSHIBA CORP 发明人 AOYAMA KENJI
分类号 H01L27/10;H01L27/105;H01L45/00;H01L49/00 主分类号 H01L27/10
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