发明名称 |
SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, AND PROBE |
摘要 |
PROBLEM TO BE SOLVED: To stabilize the electric conduction between a probe and an electrode.SOLUTION: A semiconductor memory device includes: a lower electrode 102 formed on an insulating film; a memory element layer 103 formed on the lower electrode 102; a plurality of upper electrodes 104 provided in a matrix shape on the memory element layer 103; and a probe 14 performing read and write of data for the memory element layer 103 by being in contact with the upper electrodes 104. Each of the upper electrodes 104 has a metal film 104a formed on the memory element layer 103 and a conductive nano-material layer 104b formed on the metal film 104a. |
申请公布号 |
JP2013197381(A) |
申请公布日期 |
2013.09.30 |
申请号 |
JP20120063922 |
申请日期 |
2012.03.21 |
申请人 |
TOSHIBA CORP |
发明人 |
AOYAMA KENJI |
分类号 |
H01L27/10;H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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