| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device of resistance change type memory capable of reducing wiring resistance.SOLUTION: A semiconductor memory device of resistance change type memory comprises: a first conductive layer 63; a variable resistance layer 64; an electrode layer 65; a first liner layer 66; a stopper layer 67; and a second conductive layer 70. The variable resistance layer 64 is provided on the first conductive layer 63. The electrode layer 65 is in contact with an upper surface of the variable resistance layer 64. The first liner layer 66 is in contact with an upper surface of the electrode layer 65. The stopper layer 67 is in contact with an upper layer of the first liner layer 66. The second conductive layer 70 is provided on the stopper layer 67. As compared with the stopper layer 67, the first liner layer 66 is composed of a material having a high orientation influence cancellation property of a lower layer thereof. |
