| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor growth device of a horizontal system, capable of preventing generation and adhesion of by-products by efficiently dissipating radiant heat from a susceptor, and growing a high quality crystal layer even if crystal growth is repeatedly executed.SOLUTION: In a vapor growth device, a source gas supply section defining a source gas channel has a source gas supply guide 15 defining the source gas channel and made of a material which is transparent to an infrared ray radiated from a holding part of a substrate 20. The source gas supply guide 15 is composed of a cover plate 15K in an upper surface for defining the source gas channel, and a body portion 15B contacting with the cover plate 15K from a back side of the cover plate 15K. The body portion 15B has an infrared ray taking-out part 30 formed with a recess on a surface contacting with the cover plate 15K, the recess being formed by a first inclined plane which makes an acute angle with the upper surface of the source gas supply guide 15 and inclines toward a substrate 20 holding part, and a second inclined plane on a farther side from the substrate 20 holding part than the first inclined plane. The first inclined plane has a reflection surface. |
