SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device of a cross point type capable of improving reliability by suppressing occurrence of a contact open failure.SOLUTION: A semiconductor memory device comprises: a plurality of first wirings extending along a first direction; a plurality of second wirings extending along a second direction intersecting with the first direction; and a memory cell array in which memory cells connected between the first and second wirings are arranged in an intersection section of the first and second wirings. A plurality of first dummy wiring regions are formed in a peripheral region around the memory cell array. A contact is formed so as to extend in a third direction perpendicular to the first and second directions in the peripheral region. A second dummy wiring region is formed around the contact. An average value of an area of the second dummy wiring region is smaller than an average value of areas of the plurality of first dummy wiring regions.