| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS type SRAM comprised of horizontal and vertical MISFETs of SOI structure with an enclosing type gate electrode.SOLUTION: In a CMOS type SRAM, horizontal semiconductor layers 5, 6a provided on a semiconductor substrate 1 through an insulating film 2 are taken as an SOI substrate. A gate electrode 14 is provided which encloses the entire periphery of a part 6a of a semiconductor layer by way of a gate insulating film 13. A flip-flop for holding information is formed with a horizontal N channel MISFET and a P channel MISFET in which a source drain region is provided to the semiconductor layer 5 by self-matching with the gate electrode 14. A vertical semiconductor layer 8a formed at a part of the semiconductor layer 5 is taken as the SOI substrate. A gate electrode 17 is provided which encloses the entire side surface of the semiconductor layer 8a by way of a gate insulating film 16. A word transistor is formed with a vertical N channel MISFET in which a source drain region is provided relative to an upper part and a lower part of the semiconductor layer 8a, with wiring being properly connected. |
