| 摘要 |
PROBLEM TO BE SOLVED: To evaluate the resistance of a film located below an electrode or a film contacting the electrode for a structure of an arbitrary semiconductor device.SOLUTION: A semiconductor device SD is prepared, which includes: interlayer insulating films (IL1 and IL2); and an electrode (BE or the like) provided on the interlayer insulating films (IL1 and IL2). An indentation depth and load are measured while an indenter IDT is being pushed in from above the electrode (BE or the like) in a direction perpendicular to the semiconductor device SD (a measurement step). Then, on the basis of a relationship between the indentation depth and load, the resistance of the film located below the electrode (BE or the like) or the film contacting the electrodes is determined (an evaluation step). |
