| 摘要 |
<p>An IGBT device (200) is proposed. The IGBT device is integrated in a chip of semiconductor material including a substrate (205) of a first type of conductivity, an active layer (115,120) of a second type of conductivity formed on an inner surface (210) of the substrate, a body region (125) of the first type of conductivity extending within the active layer from a front surface (130) thereof opposite the inner surface, a source region (135) of the second type of conductivity extending within the body region from the front surface, a channel region (140) being defined within the body region between the source region and the active layer, a gate element (145) insulated from the front surface extending over the channel region, a collector terminal (C) contacting the substrate on a rear surface (255) thereof opposite the inner surface, an emitter terminal (E) contacting the source region and the body region on the front surface, and a gate terminal (G) contacting the gate element. In the solution according to an embodiment of the invention, the IGBT device includes at least one buried emitter region (260) of the first type of conductivity with a concentration of impurities higher than a concentration of impurities of the substrate being formed in a corresponding portion of the substrate, a further portion of the substrate interposed between the at least one buried emitter region and the collector terminal defining an emitter resistor (Re).</p> |
