发明名称 MULTI-FUNCTION RESISTANCE CHANGE MEMORY CELLS AND APPARATUSES INCLUDING THE SAME
摘要 Various embodiments comprise apparatuses having a number of memory cells including drive circuitry to provide signal pulses of a selected time duration and/or amplitude, and an array of resistance change memory cells electrically coupled to the drive circuitry. The resistance change memory cells may be programmed for a range of retention time periods and operating speeds based on the received signal pulse. Additional apparatuses and methods are described.
申请公布号 WO2013142208(A1) 申请公布日期 2013.09.26
申请号 WO2013US30998 申请日期 2013.03.13
申请人 MICRON TECHNOLOGY, INC. 发明人 SILLS, SCOTT, E.
分类号 G11C13/00;G11C7/10;G11C7/22 主分类号 G11C13/00
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