发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
A non-volatile semiconductor memory device includes a peripheral circuit having multilayer wirings. Above this peripheral circuit, a plurality of memory strings is formed. The memory strings include a plurality of memory cells and a back gate transistor connected in series. Multiple back gate layers are formed to function as a control electrode of the back gate transistor. A first connection part composed of semiconductor films connects a lower surface of one of the back gate layers and an upper surface of the uppermost wiring layer of the multilayer wirings, and a barrier metal film is disposed above the uppermost wiring layer. |
申请公布号 |
US2013248975(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213607702 |
申请日期 |
2012.09.08 |
申请人 |
HISHIDA TOMOO;IWATA YOSHIHISA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HISHIDA TOMOO;IWATA YOSHIHISA |
分类号 |
H01L29/792;H01L21/28 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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