| 摘要 |
<p>A silicon oxide deposit is continuously prepared by feeding a powder feed containing silicon dioxide powder to a reaction chamber, heating the feed at 1,200-1,600°C to produce a silicon oxide vapor, delivering the vapor to a deposition chamber through a transfer line which is maintained at or above the temperature of the reaction chamber, for thereby causing silicon oxide to deposit on a cool substrate, and removing the silicon oxide deposit from the deposition chamber. Two deposition chambers are provided, and the step of delivering the vapor is alternately switched from one to another deposition chamber.</p> |
