MEMORY DEVICES WITH VERTICAL STORAGE NODE BRACING AND METHODS OF FABRICATING THE SAME

摘要

A memory device includes a substrate and a plurality of vertical storage nodes linearly spaced apart on the substrate along a first direction. The device further includes at least one support pattern abutting sidewalls of the storage nodes, the at least one support pattern having portions that bridge first pairs of adjacent ones of the storage nodes and openings therein that separate second pairs of adjacent ones of the storage nodes. First distances between the storage nodes of the respective first pairs may be greater than second distances between the storage nodes of the respective second pairs. Methods of fabricating such devices are also described.