发明名称 Epitaxial Deposition Apparatus, Gas Injectors, and Chemical Vapor Management System Associated Therewith
摘要 An epitaxial deposition apparatus comprises a deposition chamber with at least one gas injector having a gas injection surface and a substrate support having a deposition surface; and at least one vacuum pump having a gas aperture in fluid communication with the deposition chamber and facing the gas injection surface of the at least one gas injector, the substrate support being inter-posed between the at least one gas injector and the gas aperture of the at least one vacuum pump. The invention also relates to an epitaxial deposition gas injector and a nozzle for an epitaxial deposition gas injector. Furthermore, the invention relates to a gas supply and handling system for an epitaxial deposition apparatus.
申请公布号 US2013248611(A1) 申请公布日期 2013.09.26
申请号 US201113990299 申请日期 2011.11.30
申请人 ARES RICHARD;ISNARD LAURENT;SOCPRA SCIENCES ET GENIE S.E.C. 发明人 ARES RICHARD;ISNARD LAURENT
分类号 C23C16/455 主分类号 C23C16/455
代理机构 代理人
主权项
地址