发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate.
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申请公布号 |
US2013250992(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201313847943 |
申请日期 |
2013.03.20 |
申请人 |
SONY CORPORATION;SONY CORPPRATION |
发明人 |
OHMAE AKIRA;TOKUDA KOTA;ARIMOCHI MASAYUKI;SUZUKI NOBUHIRO;SHIOMI MICHINORI;HINO TOMONORI;YANASHIMA KATSUNORI |
分类号 |
H01L33/16;H01L33/32;H01S5/30 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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