发明名称 MAGNETORESISTIVE ELEMENT AND WRITING METHOD OF MAGNETIC MEMORY
摘要 According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer.
申请公布号 US2013250670(A1) 申请公布日期 2013.09.26
申请号 US201313781739 申请日期 2013.02.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAI TSUKASA;IZUMIDA TAKASHI;OZEKI JYUNICHI;KONDO MASAKI;ENDA TOSHIYUKI;AOKI NOBUTOSHI
分类号 G11C11/16 主分类号 G11C11/16
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