发明名称 METHOD FOR MANUFACTURING CHALCOGENIDE SOLAR CELL HAVING DUAL TEXTURE STRUCTURE IN WHICH TEXTURE IS FORMED ON SURFACE OF REAR SURFACE ELECTRODE, AND CHALCOGENIDE SOLAR CELL MANUFACTURED THEREBY
摘要 <p>The present invention relates to a method for manufacturing a chalcogenide solar cell having a dual texture structure in which texture is formed on the surface of a rear surface electrode, and comprises the steps of: preparing a substrate; forming a rear surface electrode on top of the substrate; forming rear surface texture on the surface of the rear surface electrode; forming a light absorption layer made from a chalcogenide semiconductor material on top of the rear surface electrode; forming a buffer layer on top of the light absorption layer; forming a transparent electrode on top of the buffer layer; and forming front surface texture on the surface of the transparent electrode. The chalcogenide solar cell having the dual texture structure in which the texture is formed on the surface of the rear surface electrode, according to the present invention, comprises: the substrate; the rear surface electrode which is formed on top of the substrate; the light absorption layer made from the chalcogenide semiconductor material which is formed on top of the rear surface electrode; the buffer layer which is formed on top of the light absorption layer; and the transparent electrode which is formed on top of the buffer layer, wherein a rear surface texture structure is formed on the surface of the rear surface electrode that comes into contract with the light absorption layer, and wherein a front surface texture structure is formed on the surface of the transparent electrode. The present invention provides the advantage of increasing photoelectric conversion efficiency due to a significant increase in light-trapping capability by having the dual texture structure comprising the front surface texture and the rear surface texture.</p>
申请公布号 WO2013141644(A1) 申请公布日期 2013.09.26
申请号 WO2013KR02392 申请日期 2013.03.22
申请人 KOREA INSTITUTE OF ENERGY RESEARCH 发明人 AHN, SEOUNGKYU;YOON, KYUNG-HOON;YUN, JAE-HO;CHO, JUN-SIK;AHN, SEJIN;KWAK, JIHYE;SHIN, KEE-SHIK;CHO, ARA;YOO, JIN-SU;PARK, SANG-HYUN;PARK, JOO-HYUNG;EO, YOUNG-JOO
分类号 H01L31/042;H01L31/0236;H01L31/0749;H01L31/18 主分类号 H01L31/042
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