发明名称 |
METHOD OF FORMING TRANSPARENT CONDUCTIVE FILM AND METHOD OF FORMING TRANSPARENT ELECTRODE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a transparent conductive film and a method of forming a transparent electrode which are capable of forming a low-resistant transparent conductive film on the surface of a substrate having low heat resistance.SOLUTION: A transparent conductive film 11 comprised of sheet-shaped graphene is formed by coating graphene ink, which is obtained by dispersing graphene into a predetermined solvent, to the surface of a substrate S1, and sintering the coated object at a temperature of 180°C or below. A protective layer 12 comprised of a silicon oxynitride film is formed on the surface of another substrate S2. Rear surfaces of these two substrates S1 and S2 are laminated together. |
申请公布号 |
JP2013191275(A) |
申请公布日期 |
2013.09.26 |
申请号 |
JP20120054411 |
申请日期 |
2012.03.12 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
TAKEI HIDEO;SAKIO SUSUMU;SATO MUNEYUKI;HIRAOKA KENSUKE;IKEDA SATOSHI;SAKAO YOSUKE;OTAKE FUMITO |
分类号 |
H01B13/00;B32B9/00;C01B31/02;C23C16/26;C23C16/509 |
主分类号 |
H01B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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