| 摘要 |
Unit pixels included in an image sensor are provided. The unit pixel including a photoelectric conversion region in a semiconductor substrate, the photoelectric conversion region configured to generate photo-charges corresponding to incident light; a transfer gate on a first surface of the semiconductor substrate, the transfer gate configured to transmit the photo-charges from the photoelectric conversion region to a floating diffusion region in the semiconductor substrate; and a suppression gate on the first surface of the semiconductor substrate, the suppression gate configured to correspond to the photoelectric conversion region, the suppression gate including polysilicon and a negative voltage applied to the suppression gate to reduce dark currents is generated adjacent to the first surface of the semiconductor substrate.
|
