摘要 |
Semiconductor devices, and a method for fabricating the same, include an interlayer dielectric film pattern over a substrate, a first wiring within the interlayer dielectric film pattern and having a first length in a first direction, a second wiring within the interlayer dielectric film pattern and separated from the first wiring, and a spacer contacting the first wiring and the second wiring. The spacer electrically separates the first wiring and the second wiring from each other. The second wiring has a second length different from the first length in the first direction.
|