发明名称 |
SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN IMPROVED BREAKDOWN VOLTAGE-CUTOFF FREQUENCY PRODUCT |
摘要 |
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with a hollow core that extends down from the base to the heavily-doped buried collector region. The doped region and the buried collector region have opposite dopant types. |
申请公布号 |
US2013249057(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213429262 |
申请日期 |
2012.03.23 |
申请人 |
BABCOCK JEFFREY A.;SADOVNIKOV ALEXEI |
发明人 |
BABCOCK JEFFREY A.;SADOVNIKOV ALEXEI |
分类号 |
H01L29/70;H01L21/328 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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